Medical solutions
Array Optronix is involved in extensive R&D efforts,resulting in the advancement of technology for CT imaging applications. Our multi-element photodiode arrays designed for Computed Tomography (CT) and Digital Radiography (DR) applications provide superior image quality with faster response time and close to 100% quantum efficiency. The key technology differentiators of our photodiode arrays are pixel isolation, flexible form factor, and integrated logic, enabling dramatic decrease of electrical and optical crosstalk, faster response time, lower noise, and superior specific detectivity. As a result, our patented array technology allows faster data acquisition time with potential reduction of the x-ray dose.
Technology Key Features and Benefits
Back Illuminated
- Improved yield (cost) over Front Illuminated
- Higher pixel count and pixel density
- Smaller pixel size with improved image resolution
- Higher quantum efficiency
Pixels Isolation
- Improved electrical and optical cross talk
- Tunable edge and corner pixels response (matched to inner pixels)
- Reduced impact of floating pixels
- Enhanced performance of adaptive arrays
Optimized Intrinsic Region Thickness
- Faster Image Acquisition
- Improved Quantum Efficiency
- No through-via in active device layer
Flexible Thickness
- Chip thickness adjustment outside of active region
- Potential for interposer elimination
Technology: Intellectual Property
- Technology patent portfolio with International coverage on key patents
|
Category |
Issued |
Published |
|
X-Ray Photo Diode Array (PDA) |
6762473, 7112465, 7462553, 7576371 |
12/188829 12/606012 |
|
Alternative PDA types |
7276770 |
|
|
Si PM, Avalanche PDA |
7667400 |
11/786385 |
Technology: Publications and Application Notes
The properties of our ultra-thin, pin photodiode arrays for CT and other scintillator-based applications were studied extensively and published in a number of research papers. The most pronounced features of the arrays include very small AC and DC crosstalk, very low leakage currents and noise, high shunt resistance, high specific detectivity, very fast response time, and good photo-response linearity with radiation flux. These qualities allow superior performance of our arrays in comparison with the conventional photodiode arrays currently used in X-ray imaging systems.
IEEE publications
1. SAS 2007: Photodetectors Based on Back-Illuminated Silicon Photodiode Arrays for X-ray Imaging Systems
2. NSS 2005: Silicon PIN Photodiode Array for Medical Imaging Applications: Structure, Optical Properties and Temperature Coefficients
3. NSS-MIC 2006: Automatic Test System for Wafer Level Probing Photodiode of Optical and Electrical Parameters of Array Dies
4. NSS-MIC 2006: Linearity of the Photocurrent Response with Light Intensity for Silicon PIN Photodiode Array
5. NSS-MIC 2007: Optical and Electrical Crosstalk in PIN Photodiode Array for Medical Imaging Applications
SPIE publications
1. 2004: Multi-element, two-dimensional Si pin photodiode array fabricated on a single 30-um thickness die
2. 2005: Ultra-thin, multi-element Si pin photodiode arrays for medical imaging applications
3. 2006: Temperature coefficients and noise performance and studies for the back-illuminated arrays for medical imaging applications
4. 2007: Linearity of the Photocurrent Response with Light Intensity for Silicon PIN Photodiode Array
This site is designed and maintained by Synergy Education International Pvt Ltd